SSM6N42FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N42FE
○ Power Management Switch Applications ...
SSM6N42FE
TOSHIBA Field-Effect
Transistor Silicon N-Channel MOS Type
SSM6N42FE
○ Power Management Switch Applications ○ High-Speed Switching Applications
1.5V drive N-ch 2-in-1 Low ON-resistance : RDS(ON) = 600 mΩ (max) (@VGS = 1.5V)
: RDS(ON) = 450 mΩ (max) (@VGS = 1.8V) : RDS(ON) = 330 mΩ (max) (@VGS = 2.5V) : RDS(ON) = 240 mΩ (max) (@VGS = 4.5V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
1.6±0.05 1.0±0.05 0.5 0.5
ES6
: mm 1.6±0.05 1.2±0.05
1
6
2
5
3
4
0.2±0.05
0.12±0.05
0.55±0.05
Characteristic
Symbol
Rating
Unit
Drain–source voltage
VDSS
20
V
Gate–source voltage
VGSS
± 10
V
Drain current
DC
ID (Note 1)
800
mA
Pulse
IDP (Note 1)
1600
1.Source1 2.Gate1 3.Drain2
4.Source2 5.Gate2 6.Drain1
Drain power dissipation Channel temperature Storage temperature
PD (Note 2)
150
mW
Tch
150
°C
JEDEC
―
Tstg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2N1D
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 3.0 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
r...