SSM6N42FE

SSM6N42FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N42FE ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.5V drive N-ch 2-in-1 Low ON-resistance : RDS(ON) = 600 mΩ (max) (@VGS = 1.5V) : RDS(ON) = 450 mΩ (max) (@VGS = 1.8V) : RDS(ON) = 330 mΩ (max) (@VGS = 2.5V) : RDS(ON) = 240 mΩ (max) (@VGS = 4.5V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) 1.6±0.05 1.0±0.05 0.5 0.5 ES6 : mm 1.6±0.05 1.2±0.05 1 6 2 5 3 4 0.2±0.05 0.12±0.05 0.55±0.05 Characteristic Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ± 10 V Drain current DC ID (Note 1) 800 mA Pulse IDP (Note 1) 1600 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 Drain power dissipation Channel temperature Storage temperature PD (Note 2) 150 mW Tch 150 °C JEDEC ― Tstg −55 to 150 °C JEITA ― Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-2N1D temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 3.0 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test r...