INCHANGE Semiconductor
Product Specification
isc Silicon PNP Power Transistor
2SA1964
DESCRIPTION ·CollectorEm...
INCHANGE Semiconductor
Product Specification
isc Silicon
PNP Power
Transistor
2SA1964
DESCRIPTION ·CollectorEmitter Breakdown Voltage : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC5248
APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
CollectorBase Voltage
160
V
VCEO
CollectorEmitter Voltage
160
V
VEBO
EmitterBase Voltage
5
V
IC
Collector CurrentContinuous Collector Power Dissipation @Ta=25℃
1.5
A
2 W
PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 20
150
℃
Tstg
Storage Temperature
55~150
℃
isc website：www.iscsemi.cn
1
INCHANGE Semiconductor
Product Specification
isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SA1964
TYP.
MAX
UNIT
V(BR)CEO
CollectorEmitter Breakdown Voltage
IC= 1mA; IB= 0 IC= 50μA; IE= 0 IE= 50μA; IC= 0
160
V
V(BR)CBO
CollectorBase Breakdown Voltage
160
V
V(BR)EBO
EmitterBase Breakdown Voltage
5
V
VCE(sat) ICBO
CollectorEmitter Saturation Voltage
IC= 1A; IB= 0.1A
1.0
V μA μA
Collector Cutoff Current
VCB= 160V; IE= 0
1.0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
1.0
hFE
DC Current Gain
IC= 0.1A; VCE= 5V
60
200
fT
Current...
