SSM3K335R

MOSFETs Silicon N-Channel MOS (U-MOS�-H) SSM3K335R 1. Applications Power Management Switches DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 38 mΩ (max) (@VGS = 10 V) RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) 3. Packaging and Pin Configuration SSM3K335R 1.Gate 2.Source 3.Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3K335R,LF SSM3K335R,LXGF � YES (Note 1) General Use Unintended Use Note 1: For more information, please contact our sales or use the inquiry form on our website. (Note 1) ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-02 2021-07-29 Rev.6.0 SSM3K335R 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25�) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ±20 Drain current (DC) (Note 1) ID 6 A Drain current (pulsed) (Note 1,2) IDP 14 Power dissipation Power dissipation Channel temperature (Note 3) PD (t ≤ 10 s) (Note 3) PD Tch 1 W 2 W 150 � Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/curren...