N-Ch Enhancement Mode Power MOSFET
SSD70N03-04D
Elektronische Bauelemente 75A, 30V, RDS(ON) 6 mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product ...
Description
SSD70N03-04D
Elektronische Bauelemente 75A, 30V, RDS(ON) 6 mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.
TO-252(D-Pack)
A B
C D
FEATURES
GE
Low RDS(on) provides higher efficiency and extends battery life. Miniature TO-252 surface mount package saves board space. High power and current handling capability. Low side high current DC-DC converter applications.
K M J
HF
N O P
REF.
PACKAGE INFORMATION
Package TO-252 MPQ 2.5K LeaderSize 13’ inch
A B C D E F G H
Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20
REF.
J K M N O P
Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58
Drain
Gate
Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
2 1 1
Symbol
VDS VGS ID @TC=25℃ IDM IS PD @TC=25℃ TJ, TSTG
Ratings
30 ±20 75 40 30 50 -55 ~ 175
Unit
V V A A A W °C
Continuous Source Current (Diode Conduct...
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