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SSD2030P Dataheets PDF



Part Number SSD2030P
Manufacturers South Sea Semiconductor
Logo South Sea Semiconductor
Description P-Channel Enhancement Mode MOSFET
Datasheet SSD2030P DatasheetSSD2030P Datasheet (PDF)

P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 40 @VGS = - 10V -30V -20A 65 @VGS = - 5V 75 @VGS = - 4.5V G S D SSD2030P TO-252 D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -30 + - 25 -20 -50 -1.7 50 -.

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P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 40 @VGS = - 10V -30V -20A 65 @VGS = - 5V 75 @VGS = - 4.5V G S D SSD2030P TO-252 D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -30 + - 25 -20 -50 -1.7 50 -55 to 150 Unit V V A A A W o Drain-Source Diode Forward Current Maximum Power Dissipation a IS PD TJ, TSTG Operating Junction and Storage Temperature Range C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient a R R JC JA 3 50 o C/W South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea Semiconductor, January 2008 (Rev 2.1) 1 SSD2030P P-Channel Electrical Characteristics (TA = 25 C unless otherwise noted) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage o Symbol BVDSS IDSS IGSS VGS(th) Condition VGS=0V, ID=-250 A Min -30 Typ c Max Unit V VDS=-24V, VGS=0V VGS= 25V, VDS=0V -1 -1.9 35 60 70 -35 10 700 130 90 10 8 40 30 16 9 3 3.5 -0.85 -1 100 -2.5 40 65 75 A nA V VDS=VGS ID= -250 A VGS= -10V, ID = -20A Drain-Source On-State Resistance RDS(ON) VGS= -5V, I D = -10A VGS=-4.5V, ID= - 10A m On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage ID(ON) gFS CISS COSS CRSS tD(ON) tr tD(OFF) tf Qg Qgs Qgd VSD VDS= -5V, VGS= -10V VDS= -5V, I D = -5.3A VDS= -15V VGS=0V f=1.0MHz VDD= -15V, ID= -1A, VGEN= -10V, RGEN=6 , A S 800 PF ns VDS=-15V, ID=-5.3A, VGS=-10V VDS=-15V, ID=-5.3A, VGS=-4.5V 20 nC VDS= -15V, ID = -6A, VGS=-10V VGS=0V, ID=-1.0A -1.2 V Notes a. Surface Mounted on FR4 Board, t <10 - sec. b. Pulse Test Pulse Width < 300 s, Duty Cycle < - 2%. c. Guaranteed by design, not subject to production testing. South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea Semiconductor, January 2008 (Rev 2.1) 2 SSD2030P 10 8 -VGS = 10.5V~2.5V 20 25 C o -ID, Drain Current (A) -ID, Drain Current (A) 16 6 12 4 8 2 4 -VGS = 1.5V 0 0 2 4 6 8 10 12 0 0.5 1.0 Tj = 125 C o 0 -55 C 1.5 2.0 2.5 3.0 o -VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Thansfer Characteristics 1200 1.8 800 600 400 200 0 0 5 Ciss RDS(ON), On-Resistance Normalized ( ) 1000 1.6 1.4 1.2 1.0 0.8 0.6 VGS = -10V ID = -5.8A C, Capacitance (pF) Coss Crss 10 15 20 25 30 -55 -25 0 25 50 75 100 125 -VDS, Drain-to-Sou.


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