SSS3401

SSS3401 P-Channel Enhancement Mode MOSFET Product Summary VDS (V) -30V SOT-23 D ID (A) -3A RDS(ON) (mΩ) Max 75 @VGS = -10V G 100 @VGS = -4.5V S D FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -30 + - 20 -3 -10 -1.25 1.25 -55 to 150 Unit V V A A A W o Drain-Source Diode Forward Current Maximum Power Dissipation a IS PD TJ, TSTG Operating Junction and Storage Temperature Range C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 100 o C/W South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea Semiconductor, November 2007 (Rev 3.0) 1 SSS3401 P-Channel Electrical Characteristics (TA = 25 C unless otherwise noted) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage o Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS CISS COSS CRSS tD(ON) tr tD(OFF) tf Qg Qgs Qgd VSD Condition VG...