Document
SSS2308
N-Channel Enhancement Mode MOSFET
Product Summary
VDS (V) ID (A)
RDS(ON) (m ) Max
D
SOT-23
80 @VGS = 4.5V 20V 2.3A 110 @VGS = 2.5V
G S
D
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package.
S G
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed
b o
o
Symbol
VDS VGS ID IDM
a
Limit
20 10 2.3 10 1.25 1.25 -55 to 150
Unit
V V A A A W
o
Drain-Source Diode Forward Current Maximum Power Dissipation
a
IS PD TJ, TSTG
Operating Junction and Storage Temperature Range
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
a
R
JA
100
o
C/W
South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea Semiconductor, October 2006 (Rev 2.3)
1
SSS2308
Electrical Characteristics (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Drain-Source On-State Resistance
o
Symbol
BVDSS IDSS IGSS VGS(th) RDS(ON)
Condition
VGS=0V, ID=250 A
Min
20
Typ
c
Max
Unit
V
VDS=16V, VGS=0V VGS= 10V, VDS=0V A 0.6 0.8 72.5 95 8.5 5.5 305 62 49 12 4
1 100 1.5 80 m 110
A nA V
VDS=VGS ID=250 VGS=4.5V, ID=2.7A
VGS=2.5V, ID=2.0A On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage ID(ON) gFS CISS COSS CRSS tD(ON) tr tD(OFF) tf Qg Qgs Qgd VSD VDS=5V, VGS=4V VDS=5V, ID=2A VDS=15V VGS=0V f=1.0MHz VDD=10V, ID=1A, VGS=4.5V, RGEN=6 RL=10 VDS=10V, ID=2A, VGS=4.5V VGS=0V, ID=1.25A ,
A S
PF
ns 18 10 5 0.88 1.5 0.9 1.2 V nC
Notes a. Surface Mounted on FR4 Board, t <10 - sec. b. Pulse Test Pulse Width < 300 s, Duty Cycle < - 2%. c. Guaranteed by design, not subject to production testing.
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SSS2308
20 VGS = 10, 9, 8, 7, 6, 5V 25
ID, Drain Current (A)
ID, Drain Current (A)
16 VGS = 4V VGS = 3V 12
20 Tj = 125 C 15 25 C 10
o
o
8
4 VGS = 2V 0 0 1 2 3 4 5 6
5
-55 C
0 0 0.5 1 1.5 2 2.5 3
o
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Thansfer Characteristics
1000
2.2 1.8 VGS = 4V VGS = 2.7A
C, Capacitance (pF)
800
RDS(ON), On-Resistance Normalized ( )
1.4 1.0 0.6
600
400
Ciss
200
Coss
0 0
0.2 0
Crss
5 10 15 20 25 30
-55
-25
0
25
50
75
100
125
VDS, Drain-to-Source Voltage (V)
Tj, Junction Tempertature ( O C)
Figure 3. Capacitance
1.3
Figure 4. On-Resistance Variation with Temperature
1.3
BVDSS, Normalized Drain-Source Breakdown Voltage
Vth, Normalized Gate-Source Threshold Voltage
1.2 1.1 1.0 0.9 0.8 0.7 0 -50
VDS = VGS ID = 250 A
ID = 250 1.2
A
1.1 1.0 0.9
0.8 0.7 -50 -25 0 25 50 75 100
o
-25
0
25
50
75
o
100
125
125
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation with Temperature
Figure 6. Breakdown Voltage Variation with Temperature
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SSS2308
12 20.0 VDS = 5V 10 8 6 4 2 0 0 5 10 15 20 25
IS, Source-Drain Current (A)
gFS, Transconductance (S)
10.0
1.0 TJ = 25 C 0.0 0.4 0.8 1.2 1.6 2.0 2.4
O
IDS, Drain-Source Current (A)
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation with Drain Current
5
Figure 8. Body Diode Forward Voltage Variation with Source Current
50
VGS, Gate to Source Voltage (V)
VDS = 4.5V ID = 2A
ID, Drain Current (A)
4
10
RD
S( ) ON
Lim
it
10
10
m
3
0m
s
s
1
1s DC
2
0.1 VGS = 4V Single Pulse o Tc = 25 C 0.01 0.1 1 10 20 50
1
0 0 0.7 1.4 2.1 2.8 3.5 4.2 4.9 5.6
Qg, Total Gate Charge (nC)
VSD, Drain-to-Source Voltage (V)
Figure 9. Gate Charge
Figure 10. Maximum Safe Operating Area
4
SSS2308
VDD
td(on) ton tr
90%
toff td(off)
90%
tf
VIN D VGS RGEN G
RL VOUT
VOUT
10%
INVERTED
10%
90% 50% 50%
S
VIN
10%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
10
r(t), Normalized Effective Transient Thermal Impedance
1
Duty Cycle = 0.5
0.2 0.1 0.1 0.0.5 0.02 0.01 Single Pulse 0.01 10 -5 10
-4
PDM t1 t2
1. R JA(t) = r(t)*R JA 2. R JA = see datasheet 3. TJM - TA = PDM*R JA(t) 4. Duty Cycle, D = t1/t2 10
-2
10
-3
10
-1
1
10
10
2
10
3
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
5
.