SSD3030N

SSD3030N N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (m ) Max D TO-252 17 @VGS = 10V 30V 30A 35 @VGS = 4.5V G S D FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb Free. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit 30 + - 20 30 70 20 50 -55 to 175 Unit V V A A A W o Drain-Source Diode Forward Current a IS o Maximum Power Dissipation @TC = 25 C Operating Junction and Storage Temperature Range PD TJ, TSTG C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient a R R JC 3 o C/W JA 50 South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea Semiconductor, November 2006 (Rev 2.1) 1 SSD3030N Electrical Characteristics (TA = 25 C unless otherwise noted) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Drain-Source On-State Resistance o Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) Condition VGS=0V, ID=250 A VDS=24V, VGS=0V VGS= 20V, VDS=0V VDS=VGS ID=250 A VGS=10V, ID=20A VGS=4.5V, ID=10A Min 30 Typ c Max Unit V 1 100 1 1.7 13 21 50 8 800 140 108 16 20 2.5 17 m 35 A nA V On-State Drain Current Forward Transconductance Input Capacitance Output Capa...