SSM4431

SSM4431 P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 45 @VGS = - 10V - 30V - 6.0A 70 @VGS = - 5V 80 @VGS = - 4.5V 1 2 3 8 7 6 5 SO-8 4 D (5, 6, 7, 8) FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount package. G (4) S(1, 2, 3) ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit - 30 + - 25 - 6.0 - 30 - 1.7 2.5 - 55 to 150 Unit V V A A A W o Drain-Source Diode Forward Current Maximum Power Dissipation a IS PD TJ, TSTG Operating Junction and Storage Temperature Range C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 50 o C/W South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea Semiconductor, October 2007 (Rev 3.0) 1 of 7 SSM4431 P-Channel Electrical Characteristics (TA = 25 C unless otherwise noted) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage o Symbol BVDSS IDSS IGSS VGS(th) Condition VGS=0V, ID= - 250 A VDS= - 24V, VGS=0V VGS= 25V, VDS=0V Min -30 Typ c Max Unit V -1 100 -1 - 1.9 38 60 70 - 20 10 700 130 90 10 8 40 30 16 9 3 3.5 - 0.75 - 1.2 20 800 - 2.5 45 70 80 A nA V VDS=VGS, ID= - 250 A VGS= - 10V, ID= - 6.0A Drain-Source On-State Resistance RDS(ON) VG...