Si7483DP

Si7483DP New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) --30 30 FEATURES ID (A) --24 --17 rDS(on) (Ω) 0.005 @ VGS = --10 V 0.0095 @ VGS = --4.5 V D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D Battery and Load Switching -- Notebook Computers -- Notebook Battery Packs PowerPAKt SO-8 S 6.15 mm S 1 2 S 3 S 5.15 mm G 4 G D 8 7 D 6 D 5 D D Bottom View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State --30 20 Unit V --24 --19 --60 --4.5 5.4 3.4 --55 to 150 --14 --11 A --1.6 1.9 1.2 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71940 S-21441—Rev. A, 19-Aug-02 www.vishay.com t ≤ 10 sec Steady State Steady State Symbol RthJA RthJC Typical 18 50 1.0 Maximum 23 65 1.5 Unit _C/ C/W 1 Si7483DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State ...