P-Channel MOSFET
Si7483ADP
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.0057 at VGS = - 10 V 0...
Description
Si7483ADP
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.0057 at VGS = - 10 V 0.0095 at VGS = - 4.5 V ID (A) - 24 - 17
FEATURES
Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFETS New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile 100 % Rg tested
APPLICATIONS
PowerPAK SO-8
Battery and Load Switching - Notebook Computers - Notebook Battery Packs
5.15 mm
S 3 4 G
6.15 mm
S 1 2 S
S
D 8 7 6 5 D D D
G
Bottom View Ordering Information: Si7483ADP-T1-E3 (Lead (Pb)-free) Si7483ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation
a
Symbol VDS VGS TA = 25 °C TA = 70 °C ID IDM IS TA = 25 °C TA = 70 °C PD TJ, Tstg
10 s
- 24 - 19 - 4.5 5.4 3.4
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c
Steady State - 30 ± 20 - 14 - 11 - 60 - 1.6 1.9 1.2 - 55 to 150 260
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Steady State Symbol RthJA RthJC Typical 18 50 1.0 Maximum 23 65 1.5 Unit °C/W
Notes a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 i...
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