Si7368DP

Si7368DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0055 at VGS = 10 V 0.0085 at VGS = 4.5 V ID (A) 20 16 FEATURES Halogen-free available TrenchFET® Power MOSFET Low RDS x Qg Figure of Merit Optimized For High Frequency Conversion RoHS COMPLIANT APPLICATIONS Low-Side MOSFET in Synchronous Buck DC/DC Converters in Desktops Low Output Voltage Synchronous Rectifier PowerPAK® SO-8 6.15 mm S 1 2 3 S S 5.15 mm G 4 D D 8 7 6 5 D D D G Bottom View Ordering Information: Si7368DP-T1-E3 (Lead (Pb)-free) Si7368DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) b,c a Symbol VDS VGS TA = 25 °C TA = 70 °C ID IDM IS TA = 25 °C TA = 70 °C PD TJ, Tstg 10 s 20 17 4.1 5 3.2 Steady State 20 ± 16 13 10 50 1.4 1.7 1.1 - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t ≤ 10 s Steady State Steady State Symbol RthJA Typical 20 53 3.4 Maximum 25 70 4.5 Unit °C/W RthJC Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1” x 1” FR4 board. b. See Solder Profile ( http://www.vishay.com/ppg?73257). The Power...