Si4892DY

Si4892DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.012 at VGS = 10 V 0.020 at VGS = 4.5 V ID (A) 12.4 9.6 FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFETs High Efficiency PWM Optimized 100 % Rg Tested 100 % UIS Tested D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4892DY-T1-E3 (Lead (Pb)-free) Si4892DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S 8 7 6 5 D D D D N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 3.1 2.0 - 55 to 150 2.60 20 20 1.6 1.0 mJ W °C 12.4 9.9 ± 50 1.3 10 s 30 ± 20 8.8 7.0 A Steady State Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 34 70 17 Maximum 40 80 20 °C/W Unit Document Number: 71407 S09-0221-Rev. G, 09-Feb-09 www.vishay.com 1 Si4892DY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakag...