Document
Si4886DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.010 at VGS = 10 V 0.0135 at VGS = 4.5 V ID (A) 13 11
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • High-Efficiency PWM Optimized • Compliant to RoHS Directive 2002/95/EC
SO-8
D S S S G 1 2 3 4 Top View S 8 7 6 5 D D D D G
Ordering Information: Si4886DY-T1-E3 (Lead (Pb)-free) Si4886DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 2.60 2.95 1.90 - 55 to 150 13 10.5 ± 50 1.40 1.56 1.0 W °C 10 s 30 ± 20 9.5 7.6 A Steady State Unit V
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 35 68 18 Maximum 42 80 23 °C/W Unit
Document Number: 71142 S09-0869-Rev. B, 18-May-09
www.vishay.com 1
Si4886DY
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2.6 A, dI/dt = 100 A/µs VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω VDS = 15 V, VGS = 5.0 V, ID = 13 A 14.5 3.2 4.3 14 5 42 18 40 20 10 80 30 70 ns 20 nC
a
Symbol VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD
Test Conditions VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 70 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 13 A VGS = 4.5 V, ID = 11 A VDS = 15 V, ID = 13 A IS = 2.6 A, VGS = 0 V
Min. 0.80
Typ.
Max.
Unit V
± 100 1 5 40 0.0078 0.0105 38 0.74 1.1 0.010 0.0135
nA µA A Ω S V
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 VGS = 10 V thru 4 V 40
40 I D - Drain Current (A) 50
I D - Drain Current (A)
30
30
20
20 TC = 125 °C 10 25 °C - 55 °C 0
10 3V 1V 0 0 2 4 6 8 1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
www.vishay.com 2
Document Number: 71142 S09-0869-Rev. B, 18-May-09
Si4886DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.020 2500
RDS(on) - On-Resistance (Ω)
2000 0.015 C - Capacitance (pF) Ciss 1500
VGS = 4.5 V 0.010 VGS = 10 V
1000 Coss 500 Crss
0.005
0 0 10 20 30 40 50
0 0 5 10 15 20 25 30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10 VDS = 15 V ID = 13 A R DS(on) - On-Resistance (Normalized) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 0 5 10 15 20 25 30 0.4 - 50 VGS = 10 V ID = 13 A
Capacitance
VGS - Gate-to-Source Voltage (V)
8
6
4
2
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
50 0.05
On-Resistance vs. Junction Temperature
RDS(on) - On-Resistance (Ω)
0.04
I S - Source Current (A)
10
TJ = 150 °C
0.03
TJ = 25 °C
0.02 ID = 13 A 0.01
1 0 0.2 0.4 0.6 0.8 1.0 1.2
0 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71142 S09-0869-Rev. B, 18-May-09
www.vishay.com 3
Si4886DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4 60 50 ID = 250 µA VGS(th) Variance (V) 0.0 Power (W) 40
0.2
- 0.2
30
- 0.4
20
- 0.6
10
- 0.8 - 50
- 25
0
25 50 75 100 TJ - Temperature (°C)
125
150
0 0.01
0.1 Time (s)
1
10
30
Threshold Voltage
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
Single Pulse Power
0.2
Notes:
0.1
0.1 0.05
PDM t1
0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s)
t2 1. Duty Cycle, D =
2. Per Unit Base = R thJA = 68 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
600.