Si4810BDY

Si4810BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) 0.0135 at VGS = 10 V 0.020 at VGS = 4.5 V ID (A) 10 8 FEATURES TrenchFET® Power MOSFETS Fast Switching Speed Low Gate Charge 100 % UIS and Rg Tested Pb-free Available RoHS* COMPLIANT SCHOTTKY PRODUCT SUMMARY VDS (V) 30 Diode Forward Voltage VSD (V) 0.53 at 3.0 A IF (A) 3.8 APPLICATIONS DC-DC Logic Level Low Voltage and Battery Powered Applications D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D Ordering Information: Si4810BDY-T1 Si4810BDY-T1-E3 (Lead (Pb)-free) G N-Channel MOSFET S Schottky Diode ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150 °C) (MOSFET)a Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky) a Symbol VDS VGS TA = 25 °C TA = 70 °C ID IDM IS IF IFM L = 0.1 mH TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C TJ, Tstg PD IAS EAS 10 sec 30 30 Steady State Unit V ± 20 10 8 50 2.3 3.8 40 20 20 2.5 1.6 2.0 1.3 - 55 to 150 1.38 0.88 1.31 0.84 °C W mJ 1.25 2.4 A 7.5 6 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-t...