Si4348DY

Si4348DY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) 0.0125 at VGS = 10 V 0.014 at VGS = 4.5 V ID (A) 11 10 FEATURES TrenchFET® Gen II Power MOSFET Pb-free APPLICATIONS High-Side DC/DC Conversion - Notebook - Desktop - Server Notebook Logic DC/DC, Low-Side RoHS COMPLIANT SO-8 D S S S G 1 2 3 4 Top View S Ordering Information: Si4348DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 2.2 2.5 1.6 - 55 to 150 11 8.9 40 1.20 1.31 0.84 W °C 10 sec 30 ± 12 8.0 6.5 A Steady State Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. t ≤ 10 sec Steady State Steady State Symbol RthJA RthJF Typical 43 74 19 Maximum 50 95 25 °C/W Unit Document Number: 72790 S-70316-Rev. B, 12-Feb-07 www.vishay.com 1 Si4348DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductance...