N-Channel 30-V MOSFET
Si4356DY
New Product
Vishay Siliconix
N-Channel 30-V MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.006 @ V...
Description
Si4356DY
New Product
Vishay Siliconix
N-Channel 30-V MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.006 @ VGS = 10 V 0.0075 @ VGS = 4.5 V
ID (A)
17 14
D TrenchFETr Power MOSFETS D Optimized for Low-Side Synchronous Rectifier Operation D 100 % RG Tested
APPLICATIONS
D Buck Converter D Synchronous Rectifier - Secondary Rectifier
D
SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Channel MOSFET G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
30 "12 17
Steady State
Unit
V
12 9 "50 A 1.40 1.6 1.0 -55 to 150 W _C
ID IDM IS PD TJ, Tstg
14
2.7 3.0 2.0
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction Junction-to-Ambient to Ambient (MOSFET)a Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71880 S-03662—Rev. B, 14-Apr-03 www.vishay.com t v 10 sec Steady State Steady State RthJA RthJF
Symbol
Typical
34 67 15
Maximum
41 80 19
Unit
_C/W
1
Si4356DY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconduct...
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