CEM4410B
Dec. 2002
N-Channel Enhancement Mode Field Effect Transistor
5
FEATURES
30V , 12.5A , RDS(ON)=9.5m Ω @VGS=10V. RDS(ON)=14m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package.
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SO-8 1
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ABSOLUTE MAXIMUM RATINGS (TA=25 C unles...
