CEM8809
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 15.5A, RDS(ON) = 5.5mΩ(typ) @VGS = 10V. RDS(ON) = 7.5mΩ(typ) @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D 8 D 7 D 6 D 5
PRELIMINARY
SO-8 1
1 S
2 S
3 S
4 G
AB...
