SSG5N20CD

South Sea Semiconductor SSS ID 5A SSG5N20CD Jan. 2005 ver 1.1 Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY VDSS 20V FEATURES ( m £[ ) Max RDS(ON) Super high dense cell design for low RDS(ON). 30 @ VGS = 4.0V 40 @ VGS = 2.5V Rugged and reliable. Surface Mount Package. ( 1 ) D1 D2( 8 ) TSSOP 1 2 3 4 8 7 6 5 (TOP VIEW) ( 4 ) G1 G2( 5 ) S2 ( 6,7 ) ( 2,3 )S1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a @TC=25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 20 10 5 25 1.7 1 -55 to 150 Unit V V A A A W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 125 C/W 1 S S G 5N20C D E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 10V,V DS = 0V V DS = V GS , ID = 250uA V GS = 4.0V, ID = 4A V GS =2.5V, ID = 3A V DS = 5V, ID =4A Min Typ C Max Unit 20 1 V uA 100 nA 0.5 27 35 13 800 155 125 1.5 30 40 V m ohm m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance Forward Transconductance S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Inp...