SSM6N29TU

SSM6N29TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N29TU High-Speed Switching Applications 1.8 V drive N-ch 2-in-1 Low ON-resistance: Ron = 235 mΩ (max) (@VGS = 1.8 V) Ron = 178 mΩ (max) (@VGS = 2.5 V) 0.65 0.65 2.0±0.1 1.3±0.1 2.1±0.1 1.7±0.1 +0.1 0.3-0.05 Unit V μA μA V S mΩ pF pF pF ns V Unit: mm Ron = 143 mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25 °C) (Q1 , Q2 Common) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 ± 12 0.8 1.6 500 150 − 55 to 150 Unit V V A mW °C °C 1 2 3 6 5 4 0.7±0.05 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (total dissipation) 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm ) Note: 1.Source1 2.Gate1 UF6 3.Drain2 JEDEC JEITA TOSHIBA Weight: 7 mg (typ.) 4.Source2 5.Gate2 6.Dr...