SSM6N25TU

SSM6N25TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6N25TU High Speed Switching Applications Optimum for high-density mounting in small packages Low on-resistance: Ron = 395mΩ (max) (@VGS = 1.8 V) Ron = 190mΩ (max) (@VGS = 2.5 V) Ron = 145mΩ (max) (@VGS = 4.0 V) Unit: mm 2.1±0.1 1.7±0.1 +0.1 0.3-0.05 2.0±0.1 1.3±0.1 0.65 0.65 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) 1 6 2 5 Characteristics Symbol Rating Unit 3 4 +0.06 0.16-0.05 0.7±0.05 Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ± 12 V Drain current DC Pulse Drain power dissipation Channel temperature ID 0.5 A IDP 1.5 PD 500 mW (Note 1) Tch 150 °C 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 Storage temperature range Tstg −55 to 150 °C UF6 Note: Using continuously under heavy loads (e.g. the application of JEDEC ― high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA TOSHIBA ― 2-2T1B operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 7.0 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted o...