STM7821

S T M7821 S amHop Microelectronics C orp. Arp,20 2005 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 25V F E AT UR E S ( m W ) Max ID 10A R DS (ON) S uper high dense cell design for low R DS (ON ). 9.5 @ V G S = 10V 20 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. S O-8 1 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T c=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol Vspike V DS V GS ID IDM IS PD T J , T S TG d Limit 30 25 20 10 40 10 2.5 -55 to 150 Unit V V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 50 C /W 1 S T M7821 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = 250uA V DS = 20V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 9A V GS =4.5V, ID= 3A V DS = 10V, V GS = 10V V DS = 10V, ID = 9A Min Typ C Max Unit 25 1 V uA 100 nA 1 1.8 8.5 14.5 30 13 1480 435 275 3 V OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drai...