Document
SSM4957(G)M
DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement Lower gate charge Fast switching characteristics
D1 D2 D1
D2
BV DSS R DS(ON) ID
G2 S2
-30V 24mΩ -7.7A
SO-8
G1 S1
Description
Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM4957M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low-voltage applications.
G1
D1
D2
G2 S1 S2
This device is available with Pb-free lead finish (second-level interconnect) as SSM4957GM.
Absolute Maximum Ratings
Symbol VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating -30 ± 20 -7.7 -6.1 -30 2 0.016 -55 to 150 -55 to 150
Units V V A A A W W/°C °C °C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit °C/W
10/21/2004 Rev.1.01
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SSM4957(G)M
Electrical Characteristics @ T j=25oC (unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA
2
Min. -30 -1 -
Typ. -0.02 12 27 5 18 14 11 38 25 530 435
Max. Units 24 36 -3 -1 -25 ±100 45 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
∆ BV DSS/∆ Tj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA
Static Drain-Source On-Resistance
VGS=-10V, ID=-7A VGS=-4.5V, ID=-5A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C)
o o
VDS=VGS, ID=-250uA VDS=-10V, ID=-7A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=±20V ID=-7A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3Ω , VGS=-10V RD=15Ω VGS=0V VDS=-25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
1670 2670
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2 2
Test Conditions IS=-1.7A, VGS=0V IS=-7A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 35 34
Max. Units -1.2 V ns nC
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135°C/W when mounted on min. copper pad.
10/21/2004 Rev.1.01
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SSM4957(G)M
120 120 100
T A = 25 C -7.0V -ID , Drain Current (A)
o
-10V
100
T A = 150 C
o
-10V
-ID , Drain Current (A)
80
80
-7.0V
60
60
40
-5.0V -4.5V
40
-5.0V -4.5V V G =-3.0V
20
20
V G =-3.0V
0 0 1 2 3 4 5 6 7 8 0 0 1 2 3 4 5
6
7
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
48
1.6
ID=-5A T A =25°C
40
1.4
ID=-7A V G =-10V
Normalized R DS(ON)
RDS(ON) (mΩ )
1.2
32
1.0
24
0.8
16
0.6 3 5 7 9 11 -50 0 50 100 150
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance vs. Junction Temperature
2.0
7
6
1.5 5
-IS(A)
4
T j =150 o C
3
T j =25 o C
Normalized -VGS(th) (V)
1.0
2
0.5
1
0 0 0.2 0.4 0.6 0.8 1 1.2
0.0 -50 0 50 100 150
-V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of Reverse Diode
10/21/2004 Rev.1.01
Fig 6. Gate Threshold Voltage vs. Junction Temperature
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SSM4957(G)M
12 10000
f=1.0MHz
-VGS , Gate to Source Voltage (V)
10
ID= -7A V DS = - 24 V
C iss
8
6
C (pF)
1000
4
C oss C rss
2
0 0 10 20 30 40 50 60
100 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (Rthja)
0.2
10
0.1
0.1
1ms -ID (A)
1
0.05
10ms 100ms
0.02
0.01
PDM 0.01
Single Pulse
t T
Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W
0.1
T A =25 o C Single Pulse
0.01 0.1 1 10
1s DC
100
0.001 0.0001 0.001 0.01 0.1 1 10 100 1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG -4.5V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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SSM4957(G)M
Information furnished by Silicon Standard Corporation is believed to be accurate and reli.