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SSM4957M Dataheets PDF



Part Number SSM4957M
Manufacturers Silicon Standard
Logo Silicon Standard
Description Dual P-Channel MOSFET
Datasheet SSM4957M DatasheetSSM4957M Datasheet (PDF)

SSM4957(G)M DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characteristics D1 D2 D1 D2 BV DSS R DS(ON) ID G2 S2 -30V 24mΩ -7.7A SO-8 G1 S1 Description Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM4957M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount.

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SSM4957(G)M DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characteristics D1 D2 D1 D2 BV DSS R DS(ON) ID G2 S2 -30V 24mΩ -7.7A SO-8 G1 S1 Description Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM4957M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low-voltage applications. G1 D1 D2 G2 S1 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM4957GM. Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 ± 20 -7.7 -6.1 -30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit °C/W 10/21/2004 Rev.1.01 www.SiliconStandard.com 1 of 5 SSM4957(G)M Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -30 -1 - Typ. -0.02 12 27 5 18 14 11 38 25 530 435 Max. Units 24 36 -3 -1 -25 ±100 45 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA Static Drain-Source On-Resistance VGS=-10V, ID=-7A VGS=-4.5V, ID=-5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-7A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=±20V ID=-7A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3Ω , VGS=-10V RD=15Ω VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1670 2670 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=-1.7A, VGS=0V IS=-7A, VGS=0V, dI/dt=100A/µs Min. - Typ. 35 34 Max. Units -1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135°C/W when mounted on min. copper pad. 10/21/2004 Rev.1.01 www.SiliconStandard.com 2 of 5 SSM4957(G)M 120 120 100 T A = 25 C -7.0V -ID , Drain Current (A) o -10V 100 T A = 150 C o -10V -ID , Drain Current (A) 80 80 -7.0V 60 60 40 -5.0V -4.5V 40 -5.0V -4.5V V G =-3.0V 20 20 V G =-3.0V 0 0 1 2 3 4 5 6 7 8 0 0 1 2 3 4 5 6 7 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 48 1.6 ID=-5A T A =25°C 40 1.4 ID=-7A V G =-10V Normalized R DS(ON) RDS(ON) (mΩ ) 1.2 32 1.0 24 0.8 16 0.6 3 5 7 9 11 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 2.0 7 6 1.5 5 -IS(A) 4 T j =150 o C 3 T j =25 o C Normalized -VGS(th) (V) 1.0 2 0.5 1 0 0 0.2 0.4 0.6 0.8 1 1.2 0.0 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode 10/21/2004 Rev.1.01 Fig 6. Gate Threshold Voltage vs. Junction Temperature www.SiliconStandard.com 3 of 5 SSM4957(G)M 12 10000 f=1.0MHz -VGS , Gate to Source Voltage (V) 10 ID= -7A V DS = - 24 V C iss 8 6 C (pF) 1000 4 C oss C rss 2 0 0 10 20 30 40 50 60 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (Rthja) 0.2 10 0.1 0.1 1ms -ID (A) 1 0.05 10ms 100ms 0.02 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W 0.1 T A =25 o C Single Pulse 0.01 0.1 1 10 1s DC 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 10/21/2004 Rev.1.01 www.SiliconStandard.com 4 of 5 SSM4957(G)M Information furnished by Silicon Standard Corporation is believed to be accurate and reli.


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