SSM4920M

SSM4920M N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple Drive Requirement Low On-resistance Fast Switching D1 G2 S2 D2 D1 D2 BV DSS R DS(ON) ID 25V 25mΩ 7A SO-8 S1 G1 Description D1 D2 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is widely preferred for all commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,4 3 3 Rating 25 ± 20 7 5.7 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Max. Value 62.5 Unit ℃/W Rev.2.01 6/26/2003 www.SiliconStandard.com 1 of 6 SSM4920M Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 25 1 0.037 25 35 3 1 25 - V V/℃ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V,...