Document
SSM4880AGM
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance Fast switching, planar construction Simple drive requirement
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BV DSS R DS(ON)
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30V 9mΩ 13A
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ID
SO-8
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Description
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Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G
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The SO-8 package is widely preferred for commercial and industrial surface mount applications and the SSM4880AGM is well suited for for low-voltage applications such as DC/DC converters.
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Pb-free lead finish (second-level interconnect)
Absolute Maximum Ratings
Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 ±20 13 10 50 2.5 0.02
4
Units V V A A A W W/°C mJ A °C °C
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
266 7.3 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 50
Unit °C/W
3/08/2005 Rev.2.2
www.SiliconStandard.com
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SSM4880AGM
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol BVDSS
∆ BV DSS/∆Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 30 1 -
Typ. 0.037
Max. Units 9 15 3 1 25 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Static Drain-Source On-Resistance
VGS=10V, ID=13A VGS=4.5V, ID=10A VDS=VGS, ID=250uA VDS=15V, ID=10A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= ± 20V ID=13A VDS=15V VGS=5V VDS=15V ID=1A RG=6.2Ω ,VGS=10V RD=15Ω VGS=0V VDS=25V f=1.0MHz
20 -
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25°C) Drain-Source Leakage Current (Tj=55°C)
Gate-Source Leakage Total Gate Charge
2
±100 22.5 3.3 15.4 9 16 25 50 813 516 224 -
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol IS ISM VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.3V
1
Min. -
Typ. -
Max. Units 2.3 50 1.3 A A V
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Tj=25°C, IS=2.3A, VGS=0V
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125°C/W when mounted on min. copper pad. 4.Starting Tj=25oC , VDD=25V , L=10mH , R G=25Ω
3/08/2005 Rev.2.2
www.SiliconStandard.com
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SSM4880AGM
50 50
40
T A =25 C
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ID , Drain Current (A)
30
V G = 4 .0 V
ID , Drain Current (A)
10V 8.0V 6.0V 5.0V
T A =150 .