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SSM4880AGM Dataheets PDF



Part Number SSM4880AGM
Manufacturers Silicon Standard
Logo Silicon Standard
Description N-Channel MOSFET
Datasheet SSM4880AGM DatasheetSSM4880AGM Datasheet (PDF)

SSM4880AGM N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Fast switching, planar construction Simple drive requirement D D D BV DSS R DS(ON) G 30V 9mΩ 13A D ID SO-8 S S S Description D Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G G The SO-8 package is widely preferred for commercial and industrial surface mount applications and the SSM4880AGM is we.

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SSM4880AGM N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Fast switching, planar construction Simple drive requirement D D D BV DSS R DS(ON) G 30V 9mΩ 13A D ID SO-8 S S S Description D Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G G The SO-8 package is widely preferred for commercial and industrial surface mount applications and the SSM4880AGM is well suited for for low-voltage applications such as DC/DC converters. S S Pb-free lead finish (second-level interconnect) Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20 13 10 50 2.5 0.02 4 Units V V A A A W W/°C mJ A °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 266 7.3 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit °C/W 3/08/2005 Rev.2.2 www.SiliconStandard.com 1 of 5 SSM4880AGM Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS ∆ BV DSS/∆Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.037 Max. Units 9 15 3 1 25 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance VGS=10V, ID=13A VGS=4.5V, ID=10A VDS=VGS, ID=250uA VDS=15V, ID=10A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= ± 20V ID=13A VDS=15V VGS=5V VDS=15V ID=1A RG=6.2Ω ,VGS=10V RD=15Ω VGS=0V VDS=25V f=1.0MHz 20 - Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25°C) Drain-Source Leakage Current (Tj=55°C) Gate-Source Leakage Total Gate Charge 2 ±100 22.5 3.3 15.4 9 16 25 50 813 516 224 - Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 2.3 50 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25°C, IS=2.3A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125°C/W when mounted on min. copper pad. 4.Starting Tj=25oC , VDD=25V , L=10mH , R G=25Ω 3/08/2005 Rev.2.2 www.SiliconStandard.com 2 of 5 SSM4880AGM 50 50 40 T A =25 C o ID , Drain Current (A) 30 V G = 4 .0 V ID , Drain Current (A) 10V 8.0V 6.0V 5.0V T A =150 .


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