N-channel MOSFET
SSM4800M
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance Fast Switching Simple Drive Requirement
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Description
SSM4800M
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance Fast Switching Simple Drive Requirement
G D D D
D
BV DSS R DS(ON) ID
S
25V 18mΩ 9A
SO-8
S
S
Description
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Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G
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The SSM4800M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low-voltage applications such as DC/DC converters.
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Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 25 ± 20 9 7 40 2.5 0.02 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Max. Value 50 Unit ℃/W
Rev.2.01 6/26/2003
www.SiliconStandard.com
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SSM4800M
Electrical Characteristics @ T j=25oC (unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 25 1 -
Typ. 0.037
Max. Units 18 33 3 1 25 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON) VGS(th) gf...
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