SSM4800AGM

SSM4800AGM N-Channel Enhancement Mode P Power Mosfet P D D D G S D PRODUCT SUMMARY Simple Drive Requirement Low On-resistance Fast Switching Characteristic RoHS Compliant BVDSS RDS(ON) ID S 30V 18mΩ 9.4A SO-8 S DESCRIPTION The Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Pb-free; RoHS-compliant ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±25 9.4 7.5 40 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL Thermal DATA Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit ℃/W 02/09/2007 Rev.1.00 D www.SiliconStandard.com 2 1 SSM4800AGM ELECTRICAL CHARACTERISTICS J Electrical Characteristics@Tj=25oC(unless otherwise specified) @T = 25 C ( unless otherwise specified ) o Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min. 30 1 - Typ. 0.02 14 18 16 7 1 4.5 7 8 18 8 420 210 70...