SSM9926

SSM9926 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @ VGS = 4.0V 20V 5A 40 @ VGS = 2.5V SO-8 FEATURES ◆Super high dense cell design for low RDS(ON). ◆Rugged and reliable. ◆Surface Mount Package. ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Soure Voltage Drain Current-Continuous @Tc=25oC -Pulsedb Drain-Source Diode Forward Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range o Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit 20 ±10 5 25 1.7 2 -55 to 150 Unit V V A A A W o C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambienta RθJA 62.5 o C/W South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea Semiconductor, July 2005 (Rev 1.0) 1 of 7 SSM9926 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage o Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) gFS CISS COSS CRSS tD(ON) tr tD(OFF) tf Qg Qgs Qgd VSD Condition VGS=0V, ID=250μA VDS=-16V, VGS=0V VGS=±10V, VDS=0V VDS=VGS, ID=250μA VGS=4.0V,...