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SSM3K56MFV
Silicon N-Channel MOSFET
Description
MOSFETs Silicon N-Channel MOS SSM3K56MFV 1. Applications High-Speed Switching 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Configuration VESM SSM3K56M...
Toshiba Semiconductor
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SSM3K56MFV
Silicon N-Channel MOSFET
- Toshiba Semiconductor
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