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SSM3K56CT

Toshiba Semiconductor
Part Number SSM3K56CT
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Sep 14, 2014
Detailed Description SSM3K56CT MOSFETs Silicon N-Channel MOS SSM3K56CT 1. Applications • High-Speed Switching 2. Features (1) (2) 1.5-V gat...
Datasheet PDF File SSM3K56CT PDF File

SSM3K56CT
SSM3K56CT

Overview
SSM3K56CT MOSFETs Silicon N-Channel MOS SSM3K56CT 1.
Applications • High-Speed Switching 2.
Features (1) (2) 1.
5-V gate drive voltage.
Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.
5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.
5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.
8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.
5 V) 3.
Packaging and Pin Configuration 1.
Gate 2.
Source 3.
Drain CST3 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Channel temperature Storage temperature (Note 1) (Note 1),(Note 2) (Note 3) Symbol VDSS VGSS ID IDP PD Tch Tstg Rating ...


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