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SSM6J505NU
Silicon P-Channel MOSFET
Description
MOSFETs Silicon P-Channel MOS (U-MOS�) SSM6J505NU 1. Applications Power Management Switches 2. Features (1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 21 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 16 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 12 mΩ (max) (@VGS = -4.5 ...
Toshiba Semiconductor
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SSM6J505NU
Silicon P-Channel MOSFET
- Toshiba Semiconductor
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