SSM6K30FE

SSM6K30FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Π-MOS VII) SSM6K30FE ○ High-speed switching ○ DC-DC Converter Unit: mm Small package Low RDS (ON): RDS(ON) = 210 mΩ (max) (@VGS = 10 V) : R DS(ON) = 420 mΩ (max) (@VGS = 4 V) High-speed switching: ton = 19 ns (typ.) : toff = 10 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Symbol VDS VGSS Rating Unit 20 V ±20 V 1,2,5,6: Drain 3: Gate 4: Source Drain current Drain power dissipation Channel temperature Storage temperature DC Pulse ID 1.2 A IDP 2.4 PD (Note 1) 500 mW Tch 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-2N1J Note: Using continuously under heavy loads (e.g. the application of Weight: 3 mg (typ.) high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm (t), Cu pad: 645 mm2) Marking 654 Equivalent Circuit (top view) 654 KA 123 123 Handling Precaution When handling ...