SSM6K32TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K32TU
○ Relay drive, DC/DC converter applicati...
SSM6K32TU
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM6K32TU
○ Relay drive, DC/DC converter application
z z 4Vdrive Low on resistance: Ron = 440mΩ (max) (@VGS = 4 V) Ron = 300mΩ (max) (@VGS = 10 V) Unit: mm
Absolute Maximum Ratings (Ta = 25℃)
Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 60 ±20 2 6 500 150 −55~150 Unit V V A mW °C °C
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Note:
1,2,5,6 : Drain 3 : Gate 4 : Source
JEDEC JEITA TOSHIBA
⎯ ⎯ 2-2T1D
Weight: 7.0 mg (typ.)
Electrical Characteristics (Ta = 25℃)
Characteristics Gate leakage current Drain cut-off current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON resistance Forward transfer admittance Input capac...