SSM6K210FE

SSM6K210FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K210FE ○ High-Speed Switching Applications ○ Power Management Switch Applications Unit: mm 4.0-V drive Low ON-resistance: Ron = 371 mΩ (max) (@VGS = 4.0 V), Ron = 228 mΩ (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V Drain current DC ID Pulse IDP 1.4 A 2.8 Drain power dissipation PD (Note1) 500 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C 1.2.5.6 3. 4. ES6 : Drain : Gate : Source JEDEC ― Note: Using continuously under heavy loads (e.g. the application of JEITA ― high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-2N1A Weight: 3 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Marking 654 NP Equivalent Circuit (top view) 654 123 123 Start of commercial production 2008-04 1 2014-03-01 Electri...