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SSM6J401TU

Toshiba Semiconductor
Part Number SSM6J401TU
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Features (1) 4.0 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (max) (@VGS = -4 V) RDS(ON) = 73 mΩ ...
Published Sep 14, 2014
Datasheet PDF File SSM6J401TU PDF File


SSM6J401TU
SSM6J401TU


Features
(1) 4.0 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (max) (@VGS = -4 V) RDS(ON) = 73 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment UF6 SSM6J401TU 1,2,5,6: Drain 3: Gate 4: Source ©2022 1 Toshiba Electroni...



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