Document
SM4023NSKP
®
N-Channel Enhancement Mode MOSFET
Features
·
40V/100A, RDS(ON)= 2.4mW (max.) @ VGS=10V RDS(ON)= 3.3mW (max.) @ VGS=4.5V
Pin Description
D D D D
· Reliable and Rugged · Lead Free and Green Devices Available
(RoHS Compliant)
S S
S
G
DFN5x6-8
(5,6,7,8) DD DD
Applications
· ·
SMPS Synchronous Rectification
(4) G
· DC-DC Conversion
Or-ing
S S S ( 1, 2, 3 )
N-Channel MOSFET
Ordering and Marking Information
SM4023NS Assembly Material Handling Code Temperature Range Package Code SM4023 XXXXX Package Code KP : DFN5x6-8 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material G : Halogen and Lead Free Device XXXXX - Date Code
SM4023NS KP :
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - February, 2013 1 www.sinopowersemi.com
SM4023NSKP
Absolute Maximum Ratings
Symbol V DSS V GSS TJ TSTG IS ID I DM PD RqJ C ID PD Rq JA I AS c E AS
c
®
Parameter Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Continuous Drain Current
Pulsed Drain Current
Rating 40 ±20 150 -55 to 150 TC =25° C TC=25°C TC=100°C TC=25°C TC=25°C TC=100°C Steady State TA=25° C TA=70° C TA=25°C TA=70°C t £ 10s Steady State 100 a 100a 100a 400 41 1.2 25 20 2.3 1.5 17 55 31 240
b
Unit
Common Ratings (TA =25°C Unless Otherwise Noted) V °C
A
Maximum Power Dissipation Thermal Resistance-Junction to Case Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient Avalanche Current, Single pulse (L=0.5mH) Avalanche Energy, Single pulse (L=0.5mH)
104
W ° C/W A W ° C/W A mJ
Note a: Package is limited to 100A. Note b: Pulse width limited by max. junction temperature. o o Note c: UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature Tj=25 C).
Electrical Characteristics
Symbol Static Characteristics BVDSS IDSS VGS(th) I GSS RDS(ON) Gfs
d
(TA = 25°C unless otherwise noted) Test Conditions VGS =0V, IDS =250mA VDS =32V, VGS =0V TJ=85°C VDS =VGS, I DS=250mA VGS =±20V, V DS=0V VGS =10V, IDS=30A TJ=125°C VGS =4.5V, IDS=20A VDS =5V, IDS=20A
2
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Ga.