SSM6J412TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM6J412TU
○ Power Management Switch App...
SSM6J412TU
TOSHIBA Field-Effect
Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM6J412TU
○ Power Management Switch Applications
Unit: mm
+0.1 0.3-0.05
1.5-V drive Low ON-resistance: RDS(ON) = 99.6 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 67.8 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 51.4 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 42.7 mΩ (max) (@VGS = -4.5 V)
2.1±0.1 1.7±0.1
1
6
2
5
2.0±0.1 1.3±0.1 0.65 0.65
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
3
4
+0.06 0.16-0.05
0.7±0.05
Drain-source voltage
VDSS
-20
V
Gate-source voltage
VGSS
±8
V
Drain current
DC
ID
-4.0
A
Pulse
IDP (Note 1)
-16.0
Power dissipation
PD (Note 2)
1
W
Channel temperature
Tch
150
°C
UF6
1,2,5,6: Drain 3: Gate 4: Source
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
JEITA
―
TOSHIBA
2-2T1D
Weight : 7.0mg ( typ. )
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Pw ≤ 10μs, Duty. ≤...