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SSM6J213FE Dataheets PDF



Part Number SSM6J213FE
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Datasheet SSM6J213FE DatasheetSSM6J213FE Datasheet (PDF)

SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J213FE ○ Power Management Switch Applications • 1.5-V drive • Low ON-resistance: RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 133 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±8 V Drain current DC ID .

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SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J213FE ○ Power Management Switch Applications • 1.5-V drive • Low ON-resistance: RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 133 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±8 V Drain current DC ID (Note 1) -2.6 A Pulse IDP (Note 1) -5.2 Power dissipation Channel temperature Storage temperature range PD (Note 2) 500 mW t = 10s 700 Tch 150 °C Tstg −55 to 150 °C ES6 1,2,5,6 : Drain 3 : Gate 4 : Source Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA ― operating temperature/current/voltage, etc.) are within the TOSHIBA 2-2N1J absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 3mg (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150°C during use. Note 2: Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Marking (Top View) 654 PS 123 Equivalent Circuit 654 123 1 Start of commercial production 2011-01 2014-03-01 SSM6J213FE Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit Drain-source breakdown voltage V (BR) DSS ID = -1 mA, VGS = 0 V V (BR) DSX ID = -1 mA, VGS = 5 V -20 ⎯ ⎯ V (Note 4) -15 ⎯ ⎯ V Drain cut-off current IDSS VDS = -20 V, VGS = 0 V ⎯ ⎯ -1 μA Gate leakage current IGSS VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage Vth VDS = -3 V, ID = -1 mA -0.3 ⎯ -1.0 V Forward transfer admittance ⏐Yfs⏐ VDS = -3 V, ID = -1.0 A (Note 3) 2.8 5.6 ⎯ S ID = -1.5 A, VGS = -4.5 V (Note 3) ⎯ 88.5 103 Drain–source ON-resistance RDS (ON) ID = -1.0 A, VGS = -2.5 V ID = -0.5 A, VGS = -1.8 V (Note 3) ⎯ 107.5 133 mΩ (Note 3) ⎯ 130 178 ID = -0.25 A, VGS = -1.5 V (Note 3) ⎯ 151 250 Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss VDS = -10 V, VGS = 0 V f = 1 MHz ⎯ 290 ⎯ ⎯ 44 ⎯ pF ⎯ 32 ⎯ Switching time Turn-on time Turn-off time ton VDD = -10 V, ID = -0.5 A toff VGS = 0 to -2.5 V, RG = 4.7 Ω ⎯ 12.0 ⎯ ns ⎯ 46.2 ⎯ Total gate charge Gate-source charge Gate-drain charge Qg Qgs1 Qgd VDD = -10 V, ID = -2.0 A, VGS = -4.5 V ⎯ 4.7 ⎯ ⎯ 0.4 ⎯ nC ⎯ 1.0 ⎯ Drain-source forward voltage VDSF ID = 2.6 A, VGS = 0 V (Note 3) ⎯ 0.89 1.2 V Note3: Pulse test Note4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit (a) Test Circuit 0 IN OUT −2.5V 10 μs VDD = -10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C RG RL VDD (b) VIN 0V −2.5 V (c) VOUT VDS (ON) VDD 90% 10% 90% 10% tr tf ton toff Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration 2 2014-03-01 Drain current ID (A) ID – VDS -6 -4.5 V -2.5 V -1.8 V -5 -4 -3 VGS = -1.5 V -2 -1 Common Source Ta = 25 °C Pulse test 0 0 -0.2 -0.4 -0.6 -0.8 -1 Drain–source voltage VDS (V) Drain current ID (A) SSM6J213FE ID – VGS -10 -1 -0.1 -0.01 -0.001 -0.0001 0 Ta = 100 °C 25 °C -25 °C -1.0 Common Source VDS = -3 V Pulse test -2.0 Gate–source voltage VGS (V) Drain–source ON-resistance RDS (ON) (mΩ) RDS (ON) – VGS 300 ID = -1.5 A Common Source Pulse test 200 25 °C Ta = 100 °C 100 -25 °C 0 0 -2 -4 -6 -8.


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