Document
SSM6J213FE
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM6J213FE
○ Power Management Switch Applications
• 1.5-V drive • Low ON-resistance: RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 133 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
-20
V
Gate-source voltage
VGSS
±8
V
Drain current
DC
ID (Note 1)
-2.6
A
Pulse
IDP (Note 1)
-5.2
Power dissipation
Channel temperature Storage temperature range
PD (Note 2)
500
mW
t = 10s
700
Tch
150
°C
Tstg
−55 to 150
°C
ES6
1,2,5,6 : Drain
3
: Gate
4
: Source
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
―
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2N1J
absolute maximum ratings. Please design the appropriate reliability upon reviewing the
Weight: 3mg (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking (Top View)
654
PS
123
Equivalent Circuit
654
123
1
Start of commercial production
2011-01
2014-03-01
SSM6J213FE
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min Typ. Max Unit
Drain-source breakdown voltage
V (BR) DSS ID = -1 mA, VGS = 0 V V (BR) DSX ID = -1 mA, VGS = 5 V
-20
⎯
⎯
V
(Note 4) -15
⎯
⎯
V
Drain cut-off current
IDSS VDS = -20 V, VGS = 0 V
⎯
⎯
-1
μA
Gate leakage current
IGSS VGS = ±8 V, VDS = 0 V
⎯
⎯
±1
μA
Gate threshold voltage
Vth
VDS = -3 V, ID = -1 mA
-0.3
⎯
-1.0
V
Forward transfer admittance
⏐Yfs⏐ VDS = -3 V, ID = -1.0 A
(Note 3) 2.8
5.6
⎯
S
ID = -1.5 A, VGS = -4.5 V
(Note 3) ⎯ 88.5 103
Drain–source ON-resistance
RDS (ON) ID = -1.0 A, VGS = -2.5 V ID = -0.5 A, VGS = -1.8 V
(Note 3) ⎯ 107.5 133
mΩ
(Note 3) ⎯
130 178
ID = -0.25 A, VGS = -1.5 V
(Note 3) ⎯
151 250
Input capacitance Output capacitance Reverse transfer capacitance
Ciss Coss Crss
VDS = -10 V, VGS = 0 V f = 1 MHz
⎯
290
⎯
⎯
44
⎯
pF
⎯
32
⎯
Switching time
Turn-on time Turn-off time
ton
VDD = -10 V, ID = -0.5 A
toff
VGS = 0 to -2.5 V, RG = 4.7 Ω
⎯ 12.0 ⎯ ns
⎯ 46.2 ⎯
Total gate charge Gate-source charge Gate-drain charge
Qg Qgs1 Qgd
VDD = -10 V, ID = -2.0 A, VGS = -4.5 V
⎯
4.7
⎯
⎯
0.4
⎯
nC
⎯
1.0
⎯
Drain-source forward voltage
VDSF ID = 2.6 A, VGS = 0 V
(Note 3) ⎯ 0.89 1.2
V
Note3: Pulse test
Note4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdown voltage is lowered in this mode.
Switching Time Test Circuit
(a) Test Circuit
0 IN
OUT
−2.5V
10 μs
VDD = -10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C
RG
RL VDD
(b) VIN
0V
−2.5 V
(c) VOUT VDS (ON)
VDD
90%
10%
90%
10%
tr
tf
ton
toff
Notice on Usage
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration
2
2014-03-01
Drain current ID (A)
ID – VDS
-6
-4.5 V
-2.5 V
-1.8 V
-5
-4
-3
VGS = -1.5 V
-2
-1
Common Source
Ta = 25 °C
Pulse test
0
0
-0.2
-0.4
-0.6
-0.8
-1
Drain–source voltage VDS (V)
Drain current ID (A)
SSM6J213FE
ID – VGS
-10
-1
-0.1
-0.01
-0.001 -0.0001
0
Ta = 100 °C
25 °C
-25 °C -1.0
Common Source VDS = -3 V Pulse test
-2.0
Gate–source voltage VGS (V)
Drain–source ON-resistance RDS (ON) (mΩ)
RDS (ON) – VGS
300 ID = -1.5 A Common Source
Pulse test
200
25 °C Ta = 100 °C
100
-25 °C
0
0
-2
-4
-6
-8.