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TK9A20DA

Toshiba Semiconductor

Silicon N-channel MOSFET


Description
MOSFETs Silicon N-Channel MOS (π-MOS) TK9A20DA 1. Applications Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.26 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK9A20DA 1: Gate (G) 2: Drain (D) ...



Toshiba Semiconductor

TK9A20DA

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