DatasheetsPDF.com

TK56E12N1 Dataheets PDF



Part Number TK56E12N1
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet TK56E12N1 DatasheetTK56E12N1 Datasheet (PDF)

TK56E12N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK56E12N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 5.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-so.

  TK56E12N1   TK56E12N1



Document
TK56E12N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK56E12N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 5.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (t = 1 ms) (Tc = 25) (Note 4) (Silicon limit) (Note 1), (Note 2) (Note 1), (Note 3) (Note 1) Symbol VDSS VGSS ID ID IDP PD EAS IAR Tch Tstg Rating 120 ±20 112 56 219 168 110 56 150 -55 to 150 W mJ A  A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1 2012-07 2014-06-30 Rev.4.0 TK56E12N1 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Symbol Rth(ch-c) Rth(ch-a) Max 0.74 83.3 Unit /W Note 1: Ensure that the channel temperature does not exceed 150. Note 2: Limited by silicon chip capability. Package limit is 100 A. Note 3: Device mounted with heatsink so that Rth(ch-a) becomes 2.77/W. Note 4: VDD = 80 V, Tch = 25 (initial), L = 34.4 µH, IAR = 56 A Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2014-06-30 Rev.4.0 TK56E12N1 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance (Note 5) Symbol IGSS IDSS V(BR)DSS V(BR)DSX Vth RDS(ON) Test Condition VGS = ±20 V, VDS = 0 V VDS = 120 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1.0 mA VGS = 10 V, ID = 28 A Min   120 90 2.0  Typ.      5.8 Max ±0.1 10   4.0 7.0 mΩ V Unit µA Note 5: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode. 6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Input capacitance Reverse transfer capacit.


TSPB15U100SMS1G TK56E12N1 TK56A12N1


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)