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TK58E06N1
Silicon N-Channel MOSFET
Description
TK58E06N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK58E06N1 1. Applications Switching Voltage
Regulator
s 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Ga...
Toshiba Semiconductor
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