SSF8205

SSF8205 20V Dual N-Channel MOSFET Main Product Characteristics D1 VDSS RDS(on) ID 20V 20mΩ (typ.) 4A SOT-23-6L Marking and Pin Assignment D2 G2 G1 S1 S2 Schematic Diagram Features and Benefits      Advanced trench MOSFET process technology Ideal for battery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150°C operating temperature Description The SSF8205 utilizes the latest trench processing techniques to achieve high cell density, low onresistance and high repetitive avalanche rating. These features make this device extremely efficient and reliable for use in battery protection, power switching applications and a wide variety of other applications. Absolute Max Ratings Drain-Source Voltage Gate-Source Voltage (TA=25°C unless otherwise specified) Parameter Symbol VDS VGS ID IDM PD TJ,TSTG Limit 20 ± 10 4 25 1.25 -55 To 150 Unit V V A A W °C Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 100 °C/W 1/8 SSF8205 20V Dual N-Channel MOSFET Electrical Characteristics (TA=25°C Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERI...