NCE3010S

Pb Free Product http://www.ncepower.com NCE3010S NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =30V,ID =10A RDS(ON) < 13.5mΩ @ VGS=10V RDS(ON) < 20mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current Schematic diagram Application ● ● ● Power switching application Hard Switched and High Frequency Circuits Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! SOP-8 top view Package Marking And Ordering Information Device Marking 3010S Device NCE3010S Device Package SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Limit 30 ±20 10 6 50 2.5 -55 To 150 Unit V V A A A W ℃ ID ID (100℃) IDM PD TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 50 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 Pb Free Product http://www.ncepower.com Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate...