Ordering number:686I
PNP/NPN Epitaxial Planar Silicon Transistors
2SB824/2SD1060
50V/5A Switching Applications
Applica...
Ordering number:686I
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SB824/2SD1060
50V/5A Switching Applications
Applications
· Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching.
Package Dimensions
unit:mm 2010C
[2SB824/2SD1060]
Features
· Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max/IC=(–)3A, IB=(–)0.3A.
( ) : 2SB824
JEDEC : TO-220AB EIAJ : SC-46
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
1 : Base 2 : Collector 3 : Emitter
Ratings (–)60 (–)50 (–)6 (–)5 (–)9
Unit V V V A A W
Tc=25˚C
30 150 –55 to +150
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)3A VCE=(–)5V, IC=(–)1A VCB=(–)10V, f=1MHz 70* 30 30 100 (160) MHz pF pF Conditions Ratings min typ max (–)0.1 (–)0.1 280* Unit mA mA
* : The 2SB824/2SD1060 are graded as follows by hFE at 1A :
70 Q 140 100 R 200 140 S 280
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabi...