Transistors
2SC1360, 2SC1360A
Silicon NPN epitaxial planar type
For intermediate frequency amplification of TV image
5...
Transistors
2SC1360, 2SC1360A
Silicon
NPN epitaxial planar type
For intermediate frequency amplification of TV image
5.9±0.2
Unit: mm
4.9±0.2
■ Features
8.6±0.2
High transition frequency fT
Large collector power dissipation PC
13.5±0.5 0.7–+00..23
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e Collector-base voltage 2SC1360 VCBO
50
V
pe) (Emitter open)
2SC1360A
60
nc d ge. ed ty Collector-emitter voltage 2SC1360 VCEO
45
(3.2)
V
sta tinu (Base open)
2SC1360A
60
a e cycle iscon Emitter-base voltage (Collector open) VEBO
4
V
life d, d Collector current
IC
50
mA
n u duct type Collector power dissipation
PC
1
W
te tin Pro ed Junction temperature
Tj
150
°C
four ntinu Storage temperature
Tstg −55 to +150 °C
0.45+–00..12
0.45+–00..12
(1.27)
(1.27)
1: Emitter
123
2: Collector 3: Base
2.54±0.15
EIAJ: SC-51
TO-92L-A1 Package
in n s followliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d inc e typ Collector-base voltage
2SC1360 VCBO IC = 100 µA, IE = 0
50
V
tinue anc (Emitter open)
2SC1360A
60
M is con inten Collector-emitter voltage 2SC1360 VCEO IC = 3 mA, IB = 0
45
V
/Dis ma (Base open)
2SC1360A
IC = 1 mA, IB = 0
60
D ance type, Emitter-base voltage (Collector open) VEBO IE = 100 µA, IC = 0
4
V
ten ce Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
100 nA
Main tenan Forward current ...
