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TK4P60D

Toshiba Semiconductor
Part Number TK4P60D
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 5, 2014
Detailed Description MOSFETs Silicon N-Channel MOS (π-MOS) TK4P60D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-...
Datasheet PDF File TK4P60D PDF File

TK4P60D
TK4P60D

Overview
MOSFETs Silicon N-Channel MOS (π-MOS) TK4P60D 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 1.
4 Ω (typ.
) (2) High forward transfer admittance: |Yfs| = 2.
5 S (typ.
) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK4P60D 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) DPAK 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 600 V VGSS ±30 Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse ...


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