TK10V60W

MOSFETs Silicon N-Channel MOS (DTMOS) TK10V60W 1. Applications Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK10V60W DFN8x8 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins. ©2016 Toshiba Corporation 1 Start of commercial production 2013-05 2016-05-20 Rev.4.0 TK10V60W 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 9.7 A Drain current (pulsed) (Note 1) IDP 38.8 Power dissipation (Tc = 25) PD 83.3 W Single-pulse avalanche energy (Note 2) EAS 74.5 mJ Avalanche current IAR 2.5 A Reverse drain current (DC) (Note 1) IDR 9.7 Reverse drain current (pulsed) (Note 1) IDRP 38.8 Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/...