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TK4P60DB

Toshiba Semiconductor
Part Number TK4P60DB
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Features (1) Low drain-source on-resistance : RDS(ON) = 1.6 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 2.2 S (typ.) ...
Published Sep 5, 2014
Datasheet PDF File TK4P60DB PDF File


TK4P60DB
TK4P60DB


Features
(1) Low drain-source on-resistance : RDS(ON) = 1.6 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 2.2 S (typ.) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Pa...



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