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TK4P60DA

Silicon N-Channel MOSFET

Description

MOSFETs Silicon N-Channel MOS (π-MOS) TK4P60DA 1. Applications Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.7 Ω (typ.) (VGS = 10 V) (2) High forward transfer admittance: |Yfs| = 2.2 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)...

Toshiba Semiconductor

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